[16p-A41-1~8] 12.5 有機太陽電池

▲ [16p-A41-1] Study pertaining to spray deposited Cs₂SnI₆ thin films for perovskite solar cells

〇(P)Gaurav Kapil¹、Takeshi Ohta²、Yuhei Ogomi²、Tsuguo Koyonagi²、Kenji Yoshino³、Qin Shen⁴、Taro Toyoda⁴、Takashi Minemoto⁶、Takurou N. Murakami⁵、Hiroshi Segawa¹、Shuzi Hayase² (1.University of Tokyo、2.Kyu. Inst. Tech.、3.Uni. Miya.、4.Uni. Elect.、5.Adv.Ind.Sc.&Tech.、6.Ritsu. Uni.)

キーワード：Cs2SnI6, Perovskite Solar Cells

Cs₂SnI₆ is expected to be a potential candidate for lead free perovskite solar cells [1]. Knowledge of the majority carrier in a photovoltaic material is an important issue for utilizing it effectively for solar cell application. Cs₂SnI₆ has been successfully incorporated as an efficient hole transport material for dye sensitized solar cell, indicating its p-type semiconductor behavior [2]. However, the nature of the majority carrier is still debatable as some of the reports claimed its n-type behavior only [3]. Apart from the nature of the material, the formation of pure, dense and thin films of desired thickness of Cs₂SnI₆ by solution processible method is difficult task to perform [3] due to its poor solubility in any solvent. Hence, in this work first time we fabricated pure thin films of Cs₂SnI₆ by spray coating method efficiently. Films were analyzed for the nature of carrier and important physical properties such as mobility, diffusion length and carrier life time.
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