[16p-B1-1~13] 13.8 Compound and power electron devices and process technology

[16p-B1-10] Analysis of GaN HEMT Epi Surface Treated with Fluorine-Based Neutral Beam

〇Hiroyuki Ichikawa¹, Shuichi Noda², Isao Makabe¹, Kazutaka Inoue¹, Akio Higo³, Seiji Samukawa^2,3 (1.Transmission Devices Lab., Sumitomo Electric, 2.Inst. Fluid Sci., Tohoku Univ., 3.WPI-AIMR, Tohoku Univ.)

Keywords:Neutral Beam, GaN HEMT