[16p-B1-1~13] 13.8 Compound and power electron devices and process technology

[16p-B1-13] Local activation of Mg acceptors in GaN layers by femtosecond laser irradiation

〇(M1)Riku Nakashima¹, Takuma Mori¹, Makoto Miyoshi¹, Takashi Egawa¹, Tatsuya Tanigawa² (1.Nagoya Inst., 2.Aisin Seiki Co.)

Keywords:nitride semiconductor, femtosecond laser annealing