2:45 PM - 3:00 PM
△ [16p-B1-6] Characterization of Al2O3/GaN structures using n-GaN layer grown on GaN substrate
Keywords:gallium nitride, GaN
Presentation information
Oral presentation
13 Semiconductors » 13.8 Compound and power electron devices and process technology
[16p-B1-1~13] 13.8 Compound and power electron devices and process technology
Fri. Sep 16, 2016 1:30 PM - 5:00 PM B1 (Exhibition Hall)
Kozo Makiyama(Fujitsu Lab.)