3:30 PM - 3:45 PM
△ [16p-B1-8] Impact of neutral beam etching on isolation leakage current and breakdown voltage in AlGaN/GaN HEMTs
Keywords:neutral beam, Plasma damage, AlGaN/GaN HEMT
Oral presentation
13 Semiconductors » 13.8 Compound and power electron devices and process technology
Fri. Sep 16, 2016 1:30 PM - 5:00 PM B1 (Exhibition Hall)
Kozo Makiyama(Fujitsu Lab.)
3:30 PM - 3:45 PM
Keywords:neutral beam, Plasma damage, AlGaN/GaN HEMT