[16p-B1-1~13] 13.8 Compound and power electron devices and process technology

△ [16p-B1-8] Impact of neutral beam etching on isolation leakage current and breakdown voltage in AlGaN/GaN HEMTs

〇Fuyumi Hemmi¹, Cedric Thomas², Yi-Chun Lai³, Akio Higo³, Alex Guo⁴, Shireen Warnock⁴, Jesus A. del Alamo⁴, Seiji Samukawa^2,3, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (1.RIEC, Tohoku Univ., 2.IFS, Tohoku Univ., 3.AIMR, Tohoku Univ., 4.MTL, MIT)

Keywords:neutral beam, Plasma damage, AlGaN/GaN HEMT