Transport Phenomena for Silicon Epitaxy in Minimal CVD Reactor

Miya Matsuo; Hitoshi Habuka; Ayami Yamada; Ning Li; Takanori Mikahara; Shin-ichi Ikeda; Yuuki Ishida; Shiro Hara

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[16p-B10-1~12] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Fri. Sep 16, 2016 1:45 PM - 5:00 PM B10 (Exhibition Hall)

Minoru Sasaki(Toyota Tech. Inst.), Kuniyuki Kakushima(Titech)

2:15 PM - 2:30 PM

[16p-B10-3] Transport Phenomena for Silicon Epitaxy in Minimal CVD Reactor

〇Miya Matsuo¹, Hitoshi Habuka¹, Ayami Yamada¹, Ning Li¹, Takanori Mikahara², Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama Nat. Univ., 2.MINIMAL, 3.AIST)

Keywords:Minimal manufacturing, Silicon epitaxy, Transport phenomena

The tansport phenomena in the CVD reactor for Minimal Manufacturing were analyzed using the numerical calculation. The obtained behavior influenced by the inlet gas velocity and the wafer rotation agreed with the experiment.