2016年 第77回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

4 JSAP-OSA Joint Symposia 2016 » 4.4 Opto-electronics

[16p-C301-1~12] 4.4 Opto-electronics

2016年9月16日(金) 13:30 〜 17:00 C301 (日航30階鶴)

丸山 武男(金沢大)、Set Sze(東大)

13:45 〜 14:15

[16p-C301-2] [JSAP-OSA Joint Symposia 2016 Invited Talk] High-Power and Ultrafast Photodidoes at THz Regime

Jin-Wei Shi1,2 (1.Dept. of EE, National Central Univ., Taiwan、2.Dept. of ECE, Univ. of California Santa Barbara, CA)

キーワード:Photodiodes

Commanding the full electromagnetic (EM) spectrum (near 1 MHz to around 0.3 THz), which includes generation, modulation, wireless transmission, and detection by use of photonic approaches, plays an important role in modern electronic warfare, THz bandwidth measurement instruments (network analyzer), and the next-generation of wireless communication at the millimeter-wave or THz wave bands. An ultra-fast photodiodes (PDs) serves as the key complements in this system. In this paper, we review our recent work about near-ballistic uni-traveling carrier photodiodes (NBUTC-PDs) at THz regime.