[16p-C301-1~12] 4.4 Opto-electronics

▲ [16p-C301-5] White emission from GaON diode emitter

〇Lung-Han PENG¹、Ming-Yi YAN¹、Hong-Chih Tang¹、C. F. Huang²、Ching-Yu Chen² (1.Natl Taiwan Univ、2.Optotech Corp.)

キーワード：wide bandgap oxide, novel thin film, white LED

We demonstrated warm white light emission from 400 to 800nm, with central peak wavelength tunable from 580 to 600nm, on planar i-GaON emitters grown on p-type (100) Si substrates. The current- voltage curves exhibit asymmetric bipolar diode like conduction characteristics with light emission at Vf of 3.5V and 20mA.Spectral blue shift in the peak position from 610nm to 580nm can be observed with reduced GaON emitter thickness.These observations highlight a large bias field (~5MV/cm) was needed not only to counteract the polarization field at the GaON/p-Si hetero-structure but also assist in the tunneling processes. Under the conditions of (a) forward bias, white light emission occurs due to radiative recombination between the tunnel carriers with the midgap states. As for (b) reverse bias, valence electron tunneling from the p-Si substrate to the ITO layer primarily causes joule heating.