[16p-C302-1~9] 15.6 Group IV Compound Semiconductors (SiC)

▼ [16p-C302-7] Improvement of physical and electrical properties in SiC-MOS devices using deposited insulators on barium-enhanced thermal oxides

〇(P)Atthawut Chanthaphan¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:barium, MOS, oxidation

We previously investigated oxidation rate enhancement using barium (Ba) at 950°C in pure oxygen (O₂) ambient, so-called metal-enhanced oxidation (MEO) on SiC surfaces without any SiO₂ cap, and revealed that severe surface roughening is caused by Ba-MEO. In this study, we further explored Ba-MEO for 4H-SiC systems with and without chemical-vapor-deposition (CVD) SiO₂ cap by means of physical and electrical characterizations. We found that no grain was found and the reduced roughness for the sample with the capping layer. Furthermore, the metal-oxide-semiconductor (MOS) capacitors containing CVD-SiO₂ cap showed slightly better interface quality and gate oxide reliability.