[16p-C302-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[16p-C302-8] Electrical characteristics of SiC-MOS capacitors with an ALD-deposited SiO₂ using TDMAS

〇(B)Takashi Kaneko¹, Yiming Lei¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Hiroshi Iwai², Kuniyuki Kakushima¹, Masayuki Huruhashi³, Shingo Tomohisa³, Satoshi Yamakawa³ (1.Tokyo Tech, 2.Tokyo Tech, IIR, 3.Mitsubishi Electric.)

Keywords:Silicon carbide, dielectrics, ALD