Johji Nishio

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:15 PM - 7:00 PM H101 (H)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

1:30 PM - 1:45 PM

[20p-H101-2] C-face epitaxy of 4H-SiC for Ultra-High Voltage Power Devices

〇Johji Nishio^1,2, Mitsuhiro Kushibe^1,2, Hirokuni Asamizu^2,3, Hidenori Kitai², Kazutoshi Kojima² (1.Toshiba R&D Center, 2.AIST, 3.ROHM)