Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 20, 2016 1:15 PM - 7:00 PM H101 (H)

Masashi Kato(NITech), Mitsuo Okamoto(AIST), Mitsuru Sometani(Fuji Electric)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[20p-H101-1] Growth of 3C-SiC films on Si(001) and formation of stacking faults studied by X-TEM

〇Jun Yamasaki¹, Atsushi Ishida², Kensuke Akiyama³, Yasuo Hirabayashi³ (1.Osaka Univ., 2.Nagoya Univ., 3.Kanagawa Ind. Tech. Ctr.)

1:30 PM - 1:45 PM

[20p-H101-2] C-face epitaxy of 4H-SiC for Ultra-High Voltage Power Devices

〇Johji Nishio^1,2, Mitsuhiro Kushibe^1,2, Hirokuni Asamizu^2,3, Hidenori Kitai², Kazutoshi Kojima² (1.Toshiba R&D Center, 2.AIST, 3.ROHM)

1:45 PM - 2:00 PM

△ [20p-H101-3] Spiral growth on 4H-SiC C-face on-axis substrates

〇Keiko Masumoto¹, Shingo Saito¹, Kazutoshi Kojima¹, Tomohisa Kato¹, Hajime Okumura¹ (1.AIST)

2:00 PM - 2:15 PM

[20p-H101-4] Observation of Extended Defects in a 4H-SiC Epitaxial Layer with Voltage Contrast Methods

〇Yoshinobu Kimura¹, Natsuki Tsuno¹, Hiroyuki Okino¹, Yuki Mori¹, Toshiyuki Ono¹, Renichi Yamada¹ (1.Hitachi, Ltd. R&D)

2:15 PM - 2:30 PM

[20p-H101-5] Improvement of analysis on surface recombination velocities for 4H-SiC

〇Kimihiro Kohama¹, Masashi Kato¹, Ichimura Masaya¹ (1.NIT)

2:30 PM - 2:45 PM

[20p-H101-6] Surface recombination for 4H-SiC contacting with aqueous solutions

〇Yoshihito Ichikawa¹, Masashi Kato¹, Masaya Ichimura¹ (1.NIT)

2:45 PM - 3:00 PM

△ [20p-H101-7] Consideration of oxide removal process in electrochemical etching of p-SiC

〇Taro Enokizono¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

3:15 PM - 3:30 PM

[20p-H101-8] Electron-spin-resonance study on nitrided MOS interfaces of epitaxial 4H-SiC substrates

〇Takahide Umeda¹, Yohei Kagoyama¹, Takafumi Okuda², Jun Suda², Tsunemasa Kimoto², Ryoji Kosugi³, Mitsuo Okamoto³, Shinsuke Harada³ (1.Univ. of Tsukuba, 2.Kyoto Univ., 3.AIST)

3:30 PM - 3:45 PM

△ [20p-H101-9] Proposal of local DLTS by super-higher-order scanning nonlinear dielectric microscopy and its application for evaluation of SiO₂/SiC interface

〇Norimichi Chinone¹, Ryoji Kosugi², Yasunori Tanaka³, Shinsuke Harada², Hajime Okumura², Yasuo Cho¹ (1.Tohoku Univ., 2.AIST, 3.Government of Japan)

3:45 PM - 4:00 PM

[20p-H101-10] Improvement of 4H-SiC(0001) MOS characteristics by ultra-high-temperature-oxidation with rapid cooling process

〇Mitsuru Sometani^1,2, Daisuke Nagai¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Fuji electric)

4:00 PM - 4:15 PM

△ [20p-H101-11] Surface orientation dependence of oxide growth in thermal oxidation of 4H-SiC
over wide temperature range

〇(M2)Daisuke Nagai¹, Mitsuru Sometani^1,2, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Fuji Electric Co., Ltd.)

4:15 PM - 4:30 PM

▼ [20p-H101-12] Thermal oxidation enhancement using barium on 4H-SiC(0001) substrates

〇(PC)Atthawut Chanthaphan¹, Yoshihito Katsu¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

4:30 PM - 4:45 PM

△ [20p-H101-13] Relationship between Gate Leakage Conduction and Hole Trapping Characteristics in SiC MOS Devices

〇YOSHIHITO KATSU¹, Atthawut Chanthaphan¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

4:45 PM - 5:00 PM

[20p-H101-14] Comparison between Electron and Hole Trap Density Distributions in Near-Interface Oxide of 4H-SiC MOS Capacitors

〇Yuki Fujino¹, Koji Kita¹ (1.The Univ. of Tokyo)

5:15 PM - 5:30 PM

[20p-H101-15] Control of MOS Interface Characteristics on 4H-SiC C-face by Dry Oxidation under High Temperature and Low O₂ Partial Pressure Conditions

〇Hiroyuki Kajifusa¹, Koji Kita¹ (1.The Univ. of Tokyo)

5:30 PM - 5:45 PM

△ [20p-H101-16] Competitive effects of thermal oxidation on 4H-SiC MOSFET mobility between the degradation of the substrate quality and the removal of the damaged layer

〇Hirohisa Hirai¹, Ryota Sakuta¹, Koji Kita¹ (1.The Univ. of Tokyo)

5:45 PM - 6:00 PM

△ [20p-H101-17] P-Type Acceptor Density Dependence of Hall Mobility in SiC MOS Inversion Layer

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Shuhei Nakata¹, Takeharu Kuroiwa¹, Koji Kita², Satoshi Yamakawa¹ (1.Mitsubishi Electric, 2.Tokyo Univ.)

6:00 PM - 6:15 PM

△ [20p-H101-18] Modeling and characterization of SiC-MOSFET with interface state density

〇Aiko Kunisaki¹, Junichi Hasegawa¹, Takayuki Iwasaki¹, Munetaka Noguchi², Masayuki Furuhashi², Hiroshi Watanabe², Shuhei Nakata², Tetsuo Kodera¹, Mutsuko Hatano¹ (1.Tokyo Tech, 2.Advanced Technology R&D Center, Mitsubishi Electric Corporation)

6:15 PM - 6:30 PM

[20p-H101-19] A Drain Current Model for SPICE Simulation of SiC-MOSFETs

〇Ryouta Turudome¹, Takeshi Yamasaki¹, Ryoga Maekawa¹, Yusuke Hama¹, Eiichi Murakami¹ (1.Kyushu sangyo Univ.)

6:30 PM - 6:45 PM

[20p-H101-20] Dynamic characterization of threshold voltage shift corresponding to actual application

〇Mitsuo Okamoto¹, Mitsuru Sometani^1,2, Shinsuke Harada¹, Hiroshi Yano³, Hajime Okumura¹ (1.AIST, 2.Fuji electric Co.Ltd, 3.Univ. Tsukuba)

6:45 PM - 7:00 PM

[20p-H101-21] Gradation of SiC-MOSFETs by switching operation(AC-PBTI)

〇Takahiro Furuichi¹, Ryosuke Koekiba¹, Sawaki Tsuru¹, Eiichi Murakami¹ (1.Kyushu Sangyo Univ)

Session information

[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

[20p-H101-1] Growth of 3C-SiC films on Si(001) and formation of stacking faults studied by X-TEM

[20p-H101-2] C-face epitaxy of 4H-SiC for Ultra-High Voltage Power Devices

△ [20p-H101-3] Spiral growth on 4H-SiC C-face on-axis substrates

[20p-H101-4] Observation of Extended Defects in a 4H-SiC Epitaxial Layer with Voltage Contrast Methods

[20p-H101-5] Improvement of analysis on surface recombination velocities for 4H-SiC

[20p-H101-6] Surface recombination for 4H-SiC contacting with aqueous solutions

△ [20p-H101-7] Consideration of oxide removal process in electrochemical etching of p-SiC

[20p-H101-8] Electron-spin-resonance study on nitrided MOS interfaces of epitaxial 4H-SiC substrates

△ [20p-H101-9] Proposal of local DLTS by super-higher-order scanning nonlinear dielectric microscopy and its application for evaluation of SiO₂/SiC interface

[20p-H101-10] Improvement of 4H-SiC(0001) MOS characteristics by ultra-high-temperature-oxidation with rapid cooling process

△ [20p-H101-11] Surface orientation dependence of oxide growth in thermal oxidation of 4H-SiC
over wide temperature range

▼ [20p-H101-12] Thermal oxidation enhancement using barium on 4H-SiC(0001) substrates

△ [20p-H101-13] Relationship between Gate Leakage Conduction and Hole Trapping Characteristics in SiC MOS Devices

[20p-H101-14] Comparison between Electron and Hole Trap Density Distributions in Near-Interface Oxide of 4H-SiC MOS Capacitors

[20p-H101-15] Control of MOS Interface Characteristics on 4H-SiC C-face by Dry Oxidation under High Temperature and Low O₂ Partial Pressure Conditions

△ [20p-H101-16] Competitive effects of thermal oxidation on 4H-SiC MOSFET mobility between the degradation of the substrate quality and the removal of the damaged layer

△ [20p-H101-17] P-Type Acceptor Density Dependence of Hall Mobility in SiC MOS Inversion Layer

△ [20p-H101-18] Modeling and characterization of SiC-MOSFET with interface state density

[20p-H101-19] A Drain Current Model for SPICE Simulation of SiC-MOSFETs

[20p-H101-20] Dynamic characterization of threshold voltage shift corresponding to actual application

[20p-H101-21] Gradation of SiC-MOSFETs by switching operation(AC-PBTI)

Authentication

Session information

[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

△ [20p-H101-3] Spiral growth on 4H-SiC C-face on-axis substrates

△ [20p-H101-7] Consideration of oxide removal process in electrochemical etching of p-SiC

△ [20p-H101-9] Proposal of local DLTS by super-higher-order scanning nonlinear dielectric microscopy and its application for evaluation of SiO2/SiC interface

△ [20p-H101-11] Surface orientation dependence of oxide growth in thermal oxidation of 4H-SiCover wide temperature range

▼ [20p-H101-12] Thermal oxidation enhancement using barium on 4H-SiC(0001) substrates

△ [20p-H101-13] Relationship between Gate Leakage Conduction and Hole Trapping Characteristics in SiC MOS Devices

△ [20p-H101-16] Competitive effects of thermal oxidation on 4H-SiC MOSFET mobility between the degradation of the substrate quality and the removal of the damaged layer

△ [20p-H101-17] P-Type Acceptor Density Dependence of Hall Mobility in SiC MOS Inversion Layer

△ [20p-H101-18] Modeling and characterization of SiC-MOSFET with interface state density

Authentication

△ [20p-H101-9] Proposal of local DLTS by super-higher-order scanning nonlinear dielectric microscopy and its application for evaluation of SiO₂/SiC interface

△ [20p-H101-11] Surface orientation dependence of oxide growth in thermal oxidation of 4H-SiC
over wide temperature range