Yuki Fujino

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:15 PM - 7:00 PM H101 (H)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

4:45 PM - 5:00 PM

[20p-H101-14] Comparison between Electron and Hole Trap Density Distributions in Near-Interface Oxide of 4H-SiC MOS Capacitors

〇Yuki Fujino¹, Koji Kita¹ (1.The Univ. of Tokyo)