Daisuke Nagai

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:15 PM - 7:00 PM H101 (H)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

4:00 PM - 4:15 PM

△ [20p-H101-11] Surface orientation dependence of oxide growth in thermal oxidation of 4H-SiC
over wide temperature range

〇(M2)Daisuke Nagai¹, Mitsuru Sometani^1,2, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Fuji Electric Co., Ltd.)