Hiroyuki Kajifusa

→ Search for Hiroyuki Kajifusa in Google Scholar

Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:15 PM - 7:00 PM H101 (H)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

5:15 PM - 5:30 PM

[20p-H101-15] Control of MOS Interface Characteristics on 4H-SiC C-face by Dry Oxidation under High Temperature and Low O₂ Partial Pressure Conditions

〇Hiroyuki Kajifusa¹, Koji Kita¹ (1.The Univ. of Tokyo)