Ryouta Turudome

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:15 PM - 7:00 PM H101 (H)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

6:15 PM - 6:30 PM

[20p-H101-19] A Drain Current Model for SPICE Simulation of SiC-MOSFETs

〇Ryouta Turudome¹, Takeshi Yamasaki¹, Ryoga Maekawa¹, Yusuke Hama¹, Eiichi Murakami¹ (1.Kyushu sangyo Univ.)