Satoshi Nakano

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Speaker, Author, Co-Author

Sat. Mar 19, 2016 8:45 AM - 11:45 AM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[19a-H121-1~10] 15.4 III-V-group nitride crystals

8:45 AM - 9:00 AM

[19a-H121-1] Influence of substrate and cooling rate on dislocation density for GaN single crystal

〇Satoshi Nakano¹, Bing Gao¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)