naoto ishibasi

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Speaker, Author, Co-Author

Sat. Mar 19, 2016 8:45 AM - 11:45 AM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[19a-H121-1~10] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM

[19a-H121-3] Self-separation of free-standing GaN substrates using patterned sapphire substrate via hydride vapor phase epitaxy

〇naoto ishibasi¹, Norihiro Itagaki¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ.)