Shin Goubara

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Speaker, Author, Co-Author

Sat. Mar 19, 2016 8:45 AM - 11:45 AM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[19a-H121-1~10] 15.4 III-V-group nitride crystals

9:30 AM - 9:45 AM

[19a-H121-4] Period of stripe-mask dependence on facet-structure of selective area growth of
GaN by Hydride Vapor Phase Epitaxy

〇Shin Goubara¹, Kota Yukizane¹, Tohoru Matsubara¹, Norihiro Itagaki¹, Narihito Okada¹, Keisuke Yamane², Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.Toyohashi Univ. of Technologhy)