Yoshiaki Mori

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Speaker, Author, Co-Author

Sat. Mar 19, 2016 9:00 AM - 12:30 PM S223 (S2)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19a-S223-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

11:15 AM - 11:30 AM

△ [19a-S223-9] Simulation study on the threshold voltage definition of TFET

〇Yoshiaki Mori¹, Shingo Sato¹, Yasuhisa Omura¹ (1.Kansai Univ.)