10:30 AM - 10:45 AM
▲ [19a-S224-6] Effect of Gate Dielectrics on Trap Density in PbS Nanocrystal Field-Effect Transistors
〇(D)Mohamad Insan Nugraha1,2, Hiroyuki Matsui1, Roger Hausermann1, Satria Zulkarnaen Bisri3, Mykhailo Sytnyk4, Wolfgang Heiss4, Maria Antonietta Loi2, Jun Takeya1 (1.Univ. Tokyo, 2.Univ. Groningen, 3.RIKEN, 4.Univ. Linz)