Nao Sakamaki

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Speaker, Author, Co-Author

Sat. Mar 19, 2016 4:00 PM - 6:00 PM P6 (Gymnasium)

Poster presentation
| 8 Plasma Electronics
| 8.3 Deposition of thin film and surface treatment

[19p-P6-1~8] 8.3 Deposition of thin film and surface treatment

4:00 PM - 6:00 PM

[19p-P6-8] Formation of amorphous silicon nitride by electron-beam induced reaction combined with low-temperature tunneling reactions of H atoms with solid SiF₄ films

〇Nao Sakamaki¹, Tetsuya Sato¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)