Nobuya Mori

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Speaker, Author, Co-Author

Sat. Mar 19, 2016 3:30 PM - 6:00 PM S223 (S2)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19p-S223-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

3:30 PM - 3:45 PM

[19p-S223-1] NEGF simulation based on a random-matrix model of confined phonons

Gennady Mil'nikov¹, 〇Nobuya Mori¹ (1.Osaka Univ.)

3:45 PM - 4:00 PM

[19p-S223-2] Effects of boundary conditions on phonon transport simulation

Akihiro Ueno¹, Shinji Koike¹, 〇Nobuya Mori¹ (1.Osaka Univ.)