Tsukasa Hori

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 9:00 AM - 11:45 AM H101 (H)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20a-H101-1~10] 15.6 Group IV Compound Semiconductors (SiC)

9:45 AM - 10:00 AM

[20a-H101-4] Relationship between basal plane dislocation and surface morphology during SiC solution growth

〇Tsukasa Hori¹, Kenta Murayama¹, Shunta Harada¹, Shiyu Xiao¹, Miho Tagawa¹, Toru Ujihara¹ (1.Nagoya Univ.)