Kaito Takeshima

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 9:00 AM - 11:30 AM H112 (H)

Oral presentation
| 15 Crystal Engineering
| 15.5 Group IV crystals and alloys

[20a-H112-1~10] 15.5 Group IV crystals and alloys

10:15 AM - 10:30 AM

△ [20a-H112-6] Effect of Ge growth temperature on C-mediated Ge dot formation via solid-phase epitaxy using thermal annealing

〇(B)Kaito Takeshima¹, Yuhki Itoh², Tomoyuki Kawashima², Katsuyoshi Washio² (1.Tohoku Univ., 2.Grad. Sch. Eng. Tohoku Univ.)