Yuta Nagatomi

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 9:00 AM - 12:15 PM S221 (S2)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[20a-S221-1~12] 13.3 Insulator technology

11:30 AM - 11:45 AM

[20a-S221-10] Hole mobility enhancement in Ge p-MOSFET due to introduction of Al into gate stack

〇Yuta Nagatomi¹, Shintaro Tanaka¹, Tomoki Tateyama¹, Keisuke Yamamoto², Dong Wang¹, Hiroshi Nakashima² (1.I-EggS, Kyushu Univ., 2.KASTEC, Kyushu Univ.)

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