Mengnan Ke

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 9:00 AM - 12:15 PM S221 (S2)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[20a-S221-1~12] 13.3 Insulator technology

12:00 PM - 12:15 PM

▼ [20a-S221-12] Influence of Al₂O₃/GeO_x/Ge MOS interface structures on the slow trap density

〇(D)Mengnan Ke^1,2, Xiao Yu^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.Tokyo Univ., 2.JST-CREST)