3:00 PM - 3:15 PM [20p-H113-4] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4)-Trapping Ability of Oxygen by Bonded Region between Epitaxial Layer and Silicon Substrate at Room Temperature- 〇Yoshihiro Koga1, Kazunari Kurita1 (1.SUMCO CORPORATION)