Shiho Asagami

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[20p-H121-1~24] 15.4 III-V-group nitride crystals

1:30 PM - 1:45 PM

[20p-H121-2] Comparison of electrical properties for n-GaN on sapphire between THz ellipsometry and Hall effect measurement

〇(B)Shiho Asagami¹, Kohei Tachi¹, Takashi Fujii^1,3, Tsutomu Araki¹, Yasushi Nanishi¹, Takeshi Nagashima², Toshiyuki Iwamoto³, Yukinori Sato³, Naotake Morita⁴, Ryuichi Sugie⁴, Satoshi Kamiyama⁵ (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP, 4.TRC, 5.Meijo Univ.)

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