kato Sanshiro

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:30 PM - 3:30 PM P9 (Gymnasium)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[20p-P9-15] Electrical characteristic improvement of the InSb-HEMT structure by the optimization of SLS number of times and growth temperature

〇(M2)kato Sanshiro¹, Airi Miyashita, Sachie Fujikawa, Hiroki Fujishiro (1.Tokyo University of Science)