Fumihiko Nakamura

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:30 PM - 3:30 PM P9 (Gymnasium)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[20p-P9-7] GaN/AlGaN/GaN Hetero-epitaxial-growth using by Large-diameter-Face-to-face-Vertical-type MOCVD Reactor

〇Fumihiko Nakamura¹, Shoko Hirata¹, Hiroshi Sugiura¹, Hiroji Kawai¹ (1.POWDEC K.K.)