daisuke mori

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 9:00 AM - 12:00 PM H101 (H)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[21a-H101-1~11] 15.6 Group IV Compound Semiconductors (SiC)

9:30 AM - 9:45 AM

[21a-H101-3] Local atomic structure analysis of nitrogen at SiC(000-1)/SiO₂ interface by photoelectron diffraction

〇daisuke mori¹, Takayuki Hirose¹, Yoshiki Oyama², Fumihiko Matsui² (1.Fuji Electric, 2.NAIST)