Ryota Deki

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 9:30 AM - 12:00 PM H112 (H)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals

[21a-H112-3~11] 15.3 III-V-group epitaxial crystals

9:45 AM - 10:00 AM

[21a-H112-4] Effect of InAs intermediary on the growth of InGaAs on GaAs(111)A

〇(M2)Ryota Deki¹, Takuo Sasaki², Masamitu Takahasi^1,2 (1.Univ. Hyogo, 2.JAEA)