Takehiro Yoshida

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 8:45 AM - 11:45 AM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[21a-H121-1~11] 15.4 III-V-group nitride crystals

10:00 AM - 10:15 AM

[21a-H121-6] Homoepitaxial Growth Using HVPE on High Quality GaN Substrates Prepared with Na-Flux Method and Multi-Point-Seeds Coalescence Technique

〇Takehiro Yoshida¹, Masayuki Imanishi², Toshio Kitamura¹, Kenji Otaka¹, Mamoru Imade², Yusuke Mori² (1.Sciocs, 2.Grad. Sch. of Eng., Osaka Univ.)