Atsushi Kobayashi

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 8:45 AM - 11:45 AM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[21a-H121-1~11] 15.4 III-V-group nitride crystals

10:45 AM - 11:00 AM

[21a-H121-8] Characteristics of InGaN thin-film transistors on amorphous substrates

〇Atsushi Kobayashi¹, Takeki Itoh¹, Khe Shin Lye¹, Kohei Ueno¹, Jitsuo Ohta^1,2, Hiroshi Fujioka^1,3 (1.The Univ. of Tokyo, 2.JST-PRESTO, 3.JST-ACCEL)