Ryosuke Nakagawa

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 1:00 PM - 6:45 PM H111 (H)

Oral presentation
| 6 Thin Films and Surfaces
| 6.3 Oxide electronics

[21p-H111-1~22] 6.3 Oxide electronics

2:15 PM - 2:30 PM

△ [21p-H111-6] Material selection for vacancy-injection layers
in resistive switching memory based on redox reactions

〇Ryosuke Nakagawa¹, Atushi Fukuti¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Graduate School of IST, Hokkaido Univ.)