Naohiro Fujita

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 1:15 PM - 6:00 PM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[21p-H121-1~17] 15.4 III-V-group nitride crystals

3:45 PM - 4:00 PM

[21p-H121-10] Effects of AlN buffer layer on growth of AlGaN multiple quantum wells

〇Naohiro Fujita¹, Hideto Miyake^1,2, Kazumasa Hiramatsu¹ (1.Mie Univ., 2.Mie Univ. innov.)