Issei Oshima

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 1:15 PM - 6:00 PM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[21p-H121-1~17] 15.4 III-V-group nitride crystals

4:00 PM - 4:15 PM

[21p-H121-11] Growth of semi-polar AlGaN/AlN layers on m-plane sapphire substrates and their doping and quantum-well emission properties

〇(M1)Issei Oshima^1,2, Masafumi Jo¹, Noritoshi Maeda¹, Norihiko Kamata², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)