naoto ichikawa

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 1:30 PM - 3:30 PM P10 (Gymnasium)

Poster presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

1:30 PM - 3:30 PM

△ [21p-P10-4] Improvement of p-3C-SiC photoelectrode by using a surface n-type layer

〇naoto ichikawa¹, Masashi Kato¹, Masaya Ichimura¹ (1.NIT)