Aki Sasakura

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 1:45 PM - 5:00 PM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[21p-W541-1~12] 13.8 Compound and power electron devices and process technology

2:45 PM - 3:00 PM

△ [21p-W541-5] Characterization of GaN-based Trench Gate MOSFET

〇(M1)Aki Sasakura¹, Hirokuni Tokuda¹, Masaharu Edo², Katsunori Ueno², Masaaki Kuzuhara¹ (1.University of Fukui, 2.Fuji Electric)