yuya yamaoka

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 1:45 PM - 5:00 PM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[21p-W541-1~12] 13.8 Compound and power electron devices and process technology

3:00 PM - 3:15 PM

[21p-W541-6] Relationship between Al compositions of AlGaN buffer layer and vertical leakage current of AlGaN/GaN HEMT on Si substrate

〇yuya yamaoka^1,2, Kazuhiro Ito², Ubukata Akinori¹, Yoshiki Yano¹, Toshiya Tabuchi¹, Koh Matsumoto¹, Takashi Egawa² (1.TNSC, 2.NItech)