Tohru Higuchi

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Speaker, Author, Co-Author

Tue. Mar 22, 2016 9:30 AM - 11:30 AM P4 (Gymnasium)

Poster presentation
| 6 Thin Films and Surfaces
| 6.3 Oxide electronics

[22a-P4-1~27] 6.3 Oxide electronics

9:30 AM - 11:30 AM

[22a-P4-9] Electrical and Structural Properties of Pt/TiO_2-_d/Pt Thin Film Prepared by Sputtering Using Oxygen Radical

Makoto Takanyanagi¹, Kinya Kawamura¹, Takashi Tsuchiya¹, Kazuya Terabe², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.NIMS)

9:30 AM - 11:30 AM

[22a-P4-10] Metal-insulator Transition of Valence-controlled VO₂ Thin Film

Tomohiro Tannno¹, Takaaki Suetsugu¹, Takashi Tsuchiya¹, Masaki Kobaayshi², 〇Tohru Higuchi¹, Hiroshi Kumigashira² (1.Tokyo Univ. Sci., 2.PF, KEK)

9:30 AM - 11:30 AM

[22a-P4-11] Electrical and Structural Properties of Nd_1-xSr_xFeO_3-_d Thin Film Prepared by RF Magnetron Sputtering

Wataru Namiki¹, Naoya Suzuki¹, Takuya Nakano¹, Takashi Tsuchiya¹, Masaki Kobayashi², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.PF, KEK)

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Tohru Higuchi

Speaker, Author, Co-Author

[22a-P4-1~27] 6.3 Oxide electronics

[22a-P4-9] Electrical and Structural Properties of Pt/TiO2-d/Pt Thin Film Prepared by Sputtering Using Oxygen Radical

[22a-P4-10] Metal-insulator Transition of Valence-controlled VO2 Thin Film

[22a-P4-11] Electrical and Structural Properties of Nd1-xSrxFeO3-d Thin Film Prepared by RF Magnetron Sputtering

[22a-P4-9] Electrical and Structural Properties of Pt/TiO_2-_d/Pt Thin Film Prepared by Sputtering Using Oxygen Radical

[22a-P4-10] Metal-insulator Transition of Valence-controlled VO₂ Thin Film

[22a-P4-11] Electrical and Structural Properties of Nd_1-xSr_xFeO_3-_d Thin Film Prepared by RF Magnetron Sputtering