Tatsuya Tsutsumi

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Speaker, Author, Co-Author

Tue. Mar 22, 2016 9:30 AM - 11:30 AM P6 (Gymnasium)

Poster presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[22a-P6-1~19] 15.4 III-V-group nitride crystals

9:30 AM - 11:30 AM

[22a-P6-11] Effect of well layer thickness on the external quantum effisiency of MOCVD-grown InGaN/GaN MQW sollar cells

〇Tatsuya Tsutsumi¹, Tomoki Kabata¹, Takuma Mori¹, Makoto Miyoshi¹, Takashi Egawa¹ (1.Nagoya Inst.)