Kenya Nishiguchi

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Speaker, Author, Co-Author

Tue. Mar 22, 2016 9:00 AM - 11:45 AM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

10:30 AM - 10:45 AM

△ [22a-W541-6] Effects of high-temperature anneal on operation characteristics of GaN MOSFET

〇Kenya Nishiguchi¹, Tamotsu Hashizume¹ (1.RCIQE)