Oral presentation

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[20a-H113-1~12] 15.8 Crystal evaluation, impurities and crystal defects

Sun. Mar 20, 2016 9:30 AM - 12:45 PM H113 (H)

Kentaro Kutsukake(Tohoku Univ.), Yuta Nagai(GlobalWafers Japan)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[20a-H113-1] Thermal equilibrium point defects in silicon: Frenkel pairs or Schottky defects?

〇Masashi Suezawa¹, Yoshiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R.,Tohoku Univ.)

9:45 AM - 10:00 AM

[20a-H113-2] Comments on the Voronkov model: Stages 1 & 2

〇Masashi Suezawa¹, Yoshiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R., Tohoku Univ.)

10:00 AM - 10:15 AM

[20a-H113-3] Comments on the Voronkov model (2): Effects of impurities

〇Masashi Suezawa¹, Yoshiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R.,Tohoku Univ.)

10:15 AM - 10:30 AM

[20a-H113-4] Interstitial Generation in CZ Silicon Crystals contacted with Melt during Pulling-Stop

〇Takao Abe¹, Toru Takahashi¹, Koun Shirai² (1.ShinEtsu Handotai, 2.ISIR, Osaka Univ.)

10:30 AM - 10:45 AM

[20a-H113-5] Effect of interstitial oxygen on point defect concentration in growing single crystal Si (2)

〇Kouji Sueoka¹, Kozo Nakamura¹, Jan Vanhellemont² (1.Okayama Pref. Univ., 2.Ghent Univ.)

10:45 AM - 11:00 AM

[20a-H113-6] First-principles calculations on the stability of the vacancy cluster around n-type dopants in silicon

〇Hiroki Kawai¹, Yasushi Nakasaki¹, Takahisa Kanemura² (1.Toshiba R&D, 2.Toshiba S&S)

11:15 AM - 11:30 AM

[20a-H113-7] The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations

Eiji Kamiyama^1,2, 〇Kouji Sueoka¹ (1.Okayama Pref. Univ., 2.Globalwafers Japan)

11:30 AM - 11:45 AM

[20a-H113-8] Infrared absorption measurement of low concentration carbon in Si crystal
(Ⅷ) Measurement by 2nd generation technique of 10¹⁴ cm⁻³with SIMS and CPAA

〇Kaori Watanabe¹, Naohisa Inoue^2,9, Yasunori Goto³, Takahide Sugiyama⁴, Hirofumi Seki⁵, Masumi Obuchi⁶, Hiroyuki Uno⁷, Noriyuki Fujiyama⁵, Shigeru Shimada⁸, Yuichi Kawamura⁹ (1.Systems Engineering, 2.Tokyuo U. Agri&Tech., 3.Toyota Motor Co., 4.Toyota C. L., 5.Toray Res., 6.Nanoscience, 7.S.H.I Exam., 8.Bruker, 9.Osaka P. U.)

11:45 AM - 12:00 PM

[20a-H113-9] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(11) Radiation induced intrinsic point defects and their clusters in various crystals

〇Naohisa Inoue^1,6, Yasunori Gotou², Takahide Sugiyama³, Hirofumi Seki⁴, Kaori Watanabe⁵, Yuichi Kawamura⁶ (1.Tokyuo U. Agri&Tech., 2.Toyota Motor Co., 3.Toyota Central Res. Labs., 4.Toray Research Inc., 5.Systems Engineering Inc., 6.Osaka Pref. U.)

12:00 PM - 12:15 PM

△ [20a-H113-10] Photoluminescence analysis of impurity effects in highly doped Si

〇KEI NAKAGAWA¹, Michio Tajima¹, Atsushi Ogura¹ (1.Meiji Univ.)

12:15 PM - 12:30 PM

[20a-H113-11] Bulk lifetime of free carriers evaluated by parallel dual laser-beam technique: Theory of infrared laser beam refraction by free carriers

〇Hiroshi Kaneta¹, Ichiro Omura¹ (1.Kyushu Inst. Tech.)

12:30 PM - 12:45 PM

[20a-H113-12] Bulk lifetime of free carriers evaluated by parallel dual laser-beam technique: Optical setup for parallel dual laser-beams