Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[20p-S223-9~17] 13.9 Optical properties and light-emitting devices

Sun. Mar 20, 2016 4:15 PM - 6:30 PM S223 (S2)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:15 PM - 4:30 PM

△ [20p-S223-9] Controlling the emission of the Er luminescent center in GaAs –Introduction of Photonic crystal nanocavity-

〇Takanori Kojima¹, Kanji Sakuragi¹, Masayuki Ogawa¹, Natsuki Fujioka¹, Atsushi Koizumi¹, Susumu Noda², Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Kyoto Univ.)

4:30 PM - 4:45 PM

▲ [20p-S223-10] Relationship between electrical and luminescence properties of GaN/Eu-doped GaN multiple-nanolayer structures investigated with impedance spectroscopy

〇Wanxin ZHU¹, Masashi Ishii², Atsushi Koizumi¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.NIMS)

4:45 PM - 5:00 PM

[20p-S223-11] Analysis of emission centers in GaN:Eu red LED using three-dimensional mapping

〇Masashi Ishii¹, Atsushi Koizumi², Yasufumi Fujiwara² (1.NIMS, 2.Osaka Univ.)

5:00 PM - 5:15 PM

△ [20p-S223-12] Control of valence states of Eu ion in GaN

〇TAKUMI NUNOKAWA¹, ATSUSHI KOIZUMI¹, MASAAKI MATSUDA¹, WANXIN ZHU¹, YASUFUMI FUJIWARA¹ (1.Osaka Univ.)

5:15 PM - 5:30 PM

△ [20p-S223-13] Controlling of Eu emission properties in Eu-doped GaN by microcavity

〇(D)Tomohiro Inaba¹, Kojima Takanori¹, Koizumi Atsushi¹, Fujiwara Yasufumi¹ (1.Osaka univ.)

5:30 PM - 5:45 PM

[20p-S223-14] Structural properties of Europium-doped cubic-GaN and hexagonal-GaN films
grown by radio frequency MBE

〇Shinji Yudate¹, Yuma Kitamura¹, Yuki Koyama¹, Akira Miyata¹, Sho Shirakata¹, Naohisa Happo², Shinya Hosokawa³, Kouichi Hayashi⁴ (1.Ehime Univ., 2.Hiroshima City Univ, 3.Kumamoto Univ., 4.Nagoya Inst. Tech.)

5:45 PM - 6:00 PM

[20p-S223-15] SA-MOCVD growth and luminescence properties of Tm,Yb-codoped ZnO

〇Hayato Kamei¹, Shota Takano¹, Genya Yoshii¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

6:00 PM - 6:15 PM

[20p-S223-16] Photoluminescence properties from Eu³⁺ ions doped in ZnGa₂O₄ films

〇Housei Akazawa¹, Shinojima Hiroyuki² (1.NTT DIC, 2.Kurume NCT)

6:15 PM - 6:30 PM

[20p-S223-17] PLD growth and characterization of Er doped Ga₂O₃thin films on p-type Si(111) substrates

〇Shinji Noda¹, Zhengwei Chen¹, Katsuhiko Saito¹, Tooru Tanaka¹, Mitsuhiro Nishio¹, Qixin Guo¹ (1.Saga Univ.)

Session information

[20p-S223-9~17] 13.9 Optical properties and light-emitting devices

△ [20p-S223-9] Controlling the emission of the Er luminescent center in GaAs –Introduction of Photonic crystal nanocavity-

▲ [20p-S223-10] Relationship between electrical and luminescence properties of GaN/Eu-doped GaN multiple-nanolayer structures investigated with impedance spectroscopy

[20p-S223-11] Analysis of emission centers in GaN:Eu red LED using three-dimensional mapping

△ [20p-S223-12] Control of valence states of Eu ion in GaN

△ [20p-S223-13] Controlling of Eu emission properties in Eu-doped GaN by microcavity

[20p-S223-14] Structural properties of Europium-doped cubic-GaN and hexagonal-GaN films
grown by radio frequency MBE

[20p-S223-15] SA-MOCVD growth and luminescence properties of Tm,Yb-codoped ZnO

[20p-S223-16] Photoluminescence properties from Eu³⁺ ions doped in ZnGa₂O₄ films

[20p-S223-17] PLD growth and characterization of Er doped Ga₂O₃thin films on p-type Si(111) substrates

Authentication

Session information

[20p-S223-9~17] 13.9 Optical properties and light-emitting devices

△ [20p-S223-9] Controlling the emission of the Er luminescent center in GaAs –Introduction of Photonic crystal nanocavity-

▲ [20p-S223-10] Relationship between electrical and luminescence properties of GaN/Eu-doped GaN multiple-nanolayer structures investigated with impedance spectroscopy

[20p-S223-11] Analysis of emission centers in GaN:Eu red LED using three-dimensional mapping

△ [20p-S223-12] Control of valence states of Eu ion in GaN

△ [20p-S223-13] Controlling of Eu emission properties in Eu-doped GaN by microcavity

[20p-S223-14] Structural properties of Europium-doped cubic-GaN and hexagonal-GaN filmsgrown by radio frequency MBE

[20p-S223-15] SA-MOCVD growth and luminescence properties of Tm,Yb-codoped ZnO

[20p-S223-16] Photoluminescence properties from Eu3+ ions doped in ZnGa2O4 films

[20p-S223-17] PLD growth and characterization of Er doped Ga2O3 thin films on p-type Si(111) substrates

Authentication

[20p-S223-14] Structural properties of Europium-doped cubic-GaN and hexagonal-GaN films
grown by radio frequency MBE

[20p-S223-16] Photoluminescence properties from Eu³⁺ ions doped in ZnGa₂O₄ films

[20p-S223-17] PLD growth and characterization of Er doped Ga₂O₃thin films on p-type Si(111) substrates