9:15 AM - 9:30 AM
[19a-H121-3] Self-separation of free-standing GaN substrates using patterned sapphire substrate via hydride vapor phase epitaxy
Keywords:GaN,self-separation
Presentation information
Oral presentation
15 Crystal Engineering » 15.4 III-V-group nitride crystals
[19a-H121-1~10] 15.4 III-V-group nitride crystals
Sat. Mar 19, 2016 8:45 AM - 11:45 AM H121 (H)
Narihito Okada(Yamaguchi Univ.), Hisashi Murakami(TUAT)