[19a-P4-1~31] 12.4 Organic light-emitting devices and organic transistors

[19a-P4-7] Organic memory transistors using monolayer of colloidal nano-dots as a floating gate

〇Fumihoru Nakano¹, Hideki sakagawa¹, Kazuyuki Uno¹, Ichiro Tanaka¹ (1.Wakayama Univ.)

Keywords:colloidal nano dot,organic semiconductor,memory transistor

We investigate organic memory transistors (OMT) using monolayer of colloidal nano dots (ND) as a floating gate. Judging from the results so far obtained, we estimated the writing time of our OMT to be about 300 seconds. It seems that the writing time is dominated by the tunneling probability of electrons. In this study, we report on the influence of ligand removal by ammonium sulfide treatment or UV/O₃ treatment on the writing characteristics of the OMT.