[19a-S223-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19a-S223-2] Transient Analysis of CMOS Inverter Chain by Three-Dimensional Device Simulation

〇Atsushi Hagiwara¹, Masanori Harada¹, Takuhito Kuwabara¹, Yasuyuki Ookura¹, Ken Yamaguchi¹, Hideaki Koike¹ (1.AdvanceSoft Corporation)

Keywords:Device Simulation,Inverter,CMOS